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An introduction to the physics of semiconductor devices / David J. Roulston

By: Series: The Oxford series in electrical and computer engineeringPublication details: New York : Oxford University Press, c1999Description: xviii, 290 p. : ill. ; 24 cm. + 1 electronic optical disc (CD-ROM) (4 3/4 in.)ISBN:
  • 0195114779 (hbk.)
Subject(s): DDC classification:
  • 621.38152 ROU
Contents:
Preface. - Ch. 1. Overview. - Ch. 2. Material Properties and Basic P-N Junction Relations. - Ch. 3. P-N Junction Diodes. - Ch. 4. Bipolar Junction Transistors. - Ch. 5. MOS Field-Effect Transistors. - Ch. 6. Junction Field-Effect Transistors. - Ch. 7. Overview of Special-Purpose Semiconductor Devices. - Ch. 8. Silicon Chip Technology and Fabrication Techniques. - Appendix A. The Bohr Model of the Hydrogen atom. - Appendix B. The Schrodinger Wave Equation. - Appendix C. Electron in a Square Potential Well with Infinite Sides. - Appendix D. Splitting of Energy Levels. - Appendix E. The Fermi Probability Distribution. - Appendix F. Density of States and Free-Electron Distribution Versus Energy. - Appendix G. The Einstein Relation. - Appendix H. Minority Carrier Diffusion Current and Terminal Current. - Appendix I. The Wide-Base Diode Derivation. - Appendix J. The NN[superscript +] Junction and the P[superscript +]NN[superscript +] Diode. - Appendix K. Space-Charge Recombination Current. - Appendix L. Maximum Oscillation Frequency of the BJT. - Appendix M. ECL Propagation Delay Time. - Appendix N. Noise in Semiconductor Devices. - Appendix O. The BJT Gummel Integral. - Appendix P. MOS Inversion-Layer Charge as a Function of Surface Potential. - Appendix Q. Student BIPOLE on CD-ROM. - Appendix R. Some Useful Physical Constants. - Appendix S. List of Important Symbols. - Index
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Cover image Item type Current library Home library Collection Shelving location Shelf location Call number Materials specified Vol info Copy number Status Notes Date due Barcode Item holds Item hold queue priority Course reserves
Main Collection Taylor's Library-TU 621.38152 ROU (Browse shelf(Opens below)) 1 Available SOCIT,15009,03,GR 1000115127

Preface. - Ch. 1. Overview. - Ch. 2. Material Properties and Basic P-N Junction Relations. - Ch. 3. P-N Junction Diodes. - Ch. 4. Bipolar Junction Transistors. - Ch. 5. MOS Field-Effect Transistors. - Ch. 6. Junction Field-Effect Transistors. - Ch. 7. Overview of Special-Purpose Semiconductor Devices. - Ch. 8. Silicon Chip Technology and Fabrication Techniques. - Appendix A. The Bohr Model of the Hydrogen atom. - Appendix B. The Schrodinger Wave Equation. - Appendix C. Electron in a Square Potential Well with Infinite Sides. - Appendix D. Splitting of Energy Levels. - Appendix E. The Fermi Probability Distribution. - Appendix F. Density of States and Free-Electron Distribution Versus Energy. - Appendix G. The Einstein Relation. - Appendix H. Minority Carrier Diffusion Current and Terminal Current. - Appendix I. The Wide-Base Diode Derivation. - Appendix J. The NN[superscript +] Junction and the P[superscript +]NN[superscript +] Diode. - Appendix K. Space-Charge Recombination Current. - Appendix L. Maximum Oscillation Frequency of the BJT. - Appendix M. ECL Propagation Delay Time. - Appendix N. Noise in Semiconductor Devices. - Appendix O. The BJT Gummel Integral. - Appendix P. MOS Inversion-Layer Charge as a Function of Surface Potential. - Appendix Q. Student BIPOLE on CD-ROM. - Appendix R. Some Useful Physical Constants. - Appendix S. List of Important Symbols. - Index

1 electronic optical disc (CD-ROM) : Student BIPOLE with MOSFET option V3.0 for distribution only with An introduction to the physics of semiconductor devices [by] David J. Roulston