TY  - BOOK
AU  - Roulston,David J.
TI  - An introduction to the physics of semiconductor devices
SN  - 0195114779 (hbk.)
U1  - 621.38152 
PY  - 1999///
CY  - New York
PB  - Oxford University Press
KW  - Semiconductors
N1  - Preface. - Ch. 1. Overview. - Ch. 2. Material Properties and Basic P-N Junction Relations. - Ch. 3. P-N Junction Diodes. - Ch. 4. Bipolar Junction Transistors. - Ch. 5. MOS Field-Effect Transistors. - Ch. 6. Junction Field-Effect Transistors. - Ch. 7. Overview of Special-Purpose Semiconductor Devices. - Ch. 8. Silicon Chip Technology and Fabrication Techniques. - Appendix A. The Bohr Model of the Hydrogen atom. - Appendix B. The Schrodinger Wave Equation. - Appendix C. Electron in a Square Potential Well with Infinite Sides. - Appendix D. Splitting of Energy Levels. - Appendix E. The Fermi Probability Distribution. - Appendix F. Density of States and Free-Electron Distribution Versus Energy. - Appendix G. The Einstein Relation. -  Appendix H. Minority Carrier Diffusion Current and Terminal Current. - Appendix I. The Wide-Base Diode Derivation. - Appendix J. The NN[superscript +] Junction and the P[superscript +]NN[superscript +] Diode. - Appendix K. Space-Charge Recombination Current. - Appendix L.  Maximum Oscillation Frequency of the BJT. - Appendix M. ECL Propagation Delay Time. - Appendix N. Noise in Semiconductor Devices. - Appendix O. The BJT Gummel Integral. - Appendix P. MOS Inversion-Layer Charge as a Function of Surface Potential. - Appendix Q. Student BIPOLE on CD-ROM. - Appendix R. Some Useful Physical Constants. - Appendix S. List of Important Symbols. - Index; 1 electronic optical disc (CD-ROM) : Student BIPOLE with MOSFET option V3.0 for distribution only with An introduction to the physics of semiconductor devices [by] David J. Roulston
ER  -