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008 100906s2009 si a sb 001 0 eng d
010 _z 2009-417204
020 _z9814241288
020 _z9789814241281
035 _a(CaPaEBR)ebr10389729
039 9 _y201009061436
_zVLOAD
040 _aCaPaEBR
_cCaPaEBR
050 1 4 _aTK7871.99.M44
_bE44 2009eb
082 0 4 _a621.39/5
_222
245 0 0 _aElectronic device architectures for the nano-CMOS era
_h[electronic resource] :
_bfrom ultimate CMOS scaling to beyond CMOS devices /
_ceditor, Simon Deleonibus.
260 _aSingapore :
_bPan Stanford :
_bDistributed by World Scientific,
_cc2009.
300 _axiv, 425 p. :
_bill. (some col.)
504 _aIncludes bibliographical references and index.
529 _aTSLHHL
533 _aElectronic reproduction.
_bPalo Alto, Calif. :
_cebrary,
_d2010.
_nAvailable via World Wide Web.
_nAccess may be limited to ebrary affiliated libraries.
650 0 _aMetal oxide semiconductors, Complementary.
_940340
650 0 _aNanoelectronics.
_928823
655 7 _aElectronic books.
_2local
700 1 _aDeleonibus, Simon.
_946404
710 2 _aebrary, Inc.
_925628
856 4 0 _uhttp://ezproxy.taylors.edu.my/login?url=http://site.ebrary.com/lib/taylorscollege/Doc?id=10389729
_zAn electronic book accessible through the World Wide Web; click to view
999 _c69813
_d69813