000 01356nam a2200337Ia 4500
001 vtls003164802
003 MY-SjTCS
005 20200226112704.0
006 m u
007 cr cn|||||||||
008 100712s2005 si a sb 001 0 eng d
010 _z 2005-296210
020 _z9812561218
035 _a(CaPaEBR)ebr10126001
039 9 _y201007121351
_zVLOAD
040 _aCaPaEBR
_cCaPaEBR
050 1 4 _aTK7871.95
_b.B35 2005eb
082 0 4 _a621.3815/284
_222
100 1 _aBaliga, B. Jayant,
_d1948-
245 1 0 _aSilicon RF power MOSFETS
_h[electronic resource] /
_cB. Jayant Baliga.
260 _aSingapore ;
_aHackensack, NJ :
_bWorld Scientific,
_cc2005.
300 _axvi, 302 p. :
_bill. (some col.)
504 _aIncludes bibliographical references and index.
529 _aTSLHHL
533 _aElectronic reproduction.
_bPalo Alto, Calif. :
_cebrary,
_d2009.
_nAvailable via World Wide Web.
_nAccess may be limited to ebrary affiliated libraries.
650 0 _aMetal oxide semiconductor field-effect transistors.
_940286
650 0 _aField-effect transistors.
655 7 _aElectronic books.
_2local
710 2 _aebrary, Inc.
_925628
856 4 0 _uhttp://ezproxy.taylors.edu.my/login?url=http://site.ebrary.com/lib/taylorscollege/Doc?id=10126001
_zAn electronic book accessible through the World Wide Web; click to view
999 _c97933
_d97933